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2 edition of Characterization of gap states in hydrogenated amorphous silicon using the DLTS technique. found in the catalog.

Characterization of gap states in hydrogenated amorphous silicon using the DLTS technique.

Manuel Ochoa Delgado

Characterization of gap states in hydrogenated amorphous silicon using the DLTS technique.

by Manuel Ochoa Delgado

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  • 21 Currently reading

Published .
Written in English


The Physical Object
Pagination173 leaves
Number of Pages173
ID Numbers
Open LibraryOL14744598M

Gap states in amorphous hydrogenated silicon (a-Si:H) doped and microcrystalline silicon doped n and p were examined by analysis of subgap absorption spectra obtained by the Constant Photocurrent Method (CPM) and the Photothermal Deflection Spectroscopy (PDS). Assuming a .   The effects of hydrogen dilution, subtle boron compensation, and light-soaking on the gap states of hydrogenated amorphous silicon films (a-Si:H) near and above the threshold of microcrystallinity have been investigated in detail by the constant photocurrent method and the improved phase-shift analysis of modulated photocurrent technique. It is shown that high hydrogen dilution .

Density of gap states in hydrogenated amorphous silicon Eddy Yahya Iowa State University Follow this and additional works at: Part of theCondensed Matter Physics Commons This Dissertation is brought to you for free and open access by the Iowa State University Capstones, Theses and Dissertations at Iowa State University. The density of states distributions near mid gap in a series of hydrogenated amorphous silicon films have been determined from space charge limited current measurements. The measurements were made on Au/aSi:H Schottky diode structures prepared by reactive rf sputter deposition.

Dasgupta D, Demichelis F, Pirri CF, Tagliaferro A. π bands and gap states from optical absorption and electron-spin-resonance studies on amorphous carbon and amorphous hydrogenated carbon films. Physical Review B ; 43(3–15)– @article{osti_, title = {Atomic-scale characterization of hydrogenated amorphous-silicon films and devices. Annual subcontract report, 14 February April }, author = {Gallagher, A and Tanenbaum, D and Laracuente, A and Jelenkovic, B}, abstractNote = {Properties of the hydrogenated amorphous silicon (a-Si:H) films used in photovoltaic (PV) panels are reported.


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Characterization of gap states in hydrogenated amorphous silicon using the DLTS technique by Manuel Ochoa Delgado Download PDF EPUB FB2

Hydrogenated amorphous silicon (a-Si:H) thin films deposited on crystalline silicon and Corning glass substrate were analyzed using different capacitance techniques.

The distribution of localized states and some electronic properties were studied using the temperature, frequency and bias dependence of the Schottky barrier capacitance and deep Cited by: 3.

A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out.

These structures are of interest Author: Héctor García, Helena Castán, Salvador Dueñas, Luis Bailón, Rodrigo García-Hernansanz, Javier Olea. A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out.

These structures are of interest for photovoltaic applications. Different growth temperatures between 30 and °C were Author: Héctor García, Helena Castán, Salvador Dueñas, Luis Bailón, Rodrigo García-Hernansanz, Javier Olea. Journal of Non-Crystalline Solids 46 () North-Holland Publishing Company DLTS RESPONSE DUE TO LOCALIZED STATES IN HYDROGENATED AMORPHOUS SILICON C.H.

HYUN and M.S. SHUR Department of Electrical Engineering~ University of Minnesota, Minneapolis, MinnesotaUSA A. MADAN * Energy Conversion Devices, West Maple Cited by:   A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out.

These structures are of interest for photovoltaic applications. Different growth temperatures between 30 and °C were : Héctor García, Helena Castán, Salvador Dueñas, Luis Bailón, Rodrigo García-Hernansanz, Javier Olea.

Hydrogenated amorphous silicon-sulfur alloy layers were prepared by the RF glow discharge decomposition of a mixture of SiH 4 and H 2 S gases diluted in helium. Films were concurrently deposited on Corning glass and on highly resistive c-Si substrates. The substrate temperature during growth was held constant at °C.

Fortunately, in hydrogenated amorphous silicon (a-Si:H), most of the Si dangling bonds which would otherwise exist are terminated by a hydrogen atom.

This has two effects: (1) the density of gap states is greatly reduced and (2) the energy gap, reflecting the average binding energy. The affect of light soaking on the gap-state distribution of undoped hydrogenated amorphous silicon (a-Si:H) has been investigated using the charge deep level transient spectroscopy (DLTS) technique.

The electrical characterization of hydrogenated amorphous silicon oxide (a-SiO x:H) films was performed by electron spin resonance (ESR) and electrical conductivity measurements.

In the ESR spectra of the a-SiO x:H films, two ESR peaks with g-values of and were observed. We report on the evolution of three groups of gap states (Dh,Dz, and De) in the charge deep-level transient spectroscopy (Q-DLTS) spectra during light soaking of undoped hydrogenated amorphous.

The density of gap states distribution of amorphous hydrogenated silicon carbide films grown with ECR-CVD was investigated with the high-frequency (1 MHz) capacitance-voltage measurement technique. The mid-gap density near the Fermi level was found to be 3×10 15 cm −3 eV −1, and rose exponentially towards the valence band.

We use solid-state voltcoulometry (SSVC) to investigate hydrogenated amorphous silicon (a-Si:H). In this technique, a charge transient in response to a potential step, ΔU, applied to undoped a-Si.

Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection Investigation of the density of localized states in a-Si using the field effect technique. Non-Cryst. Solids, 20 ac photoconductivity of hydrogenated amorphous silicon: influence of long-range potential fluctuations.

Spectroscopy of Gap States in Amorphous Chalcogenide Semiconductors Hiroyoshi Natio, Masafumi Nakaishi, Hiroshi Nakayama et al.-Amorphous Silicon Film: A New Erasable Medium for Optical Recording M.

Lee, C. Huang and C. Lin-Recent citations Mapping of non-radiative point defect distributions in semiconductors using scanning DLTS O. Coluzza C. et al. () Preparation, Study and Characterization of Hydrogenated Amorphous Silicon for Photovoltaic Cells. In: Van Overstraeten R., Palz W.

(eds) Photovoltaic Power Generation. Solar Energy R&D in the European Community (Series C Photovoltaic Power Generation), vol 3. material for hard coatings [6, 7], continue the importance of amorphous structures. Fi-nally, amorphous silicon (a-Si) in its hydrogenated form is a key electronic material for thin-film transistors [8] and photovoltaics [9] among many other applications.

However, despite this widespread and longstanding use, understanding of the structure of. The most common thin-film silicon phases are hydrogenated amorphous silicon (a-Si:H) and hydrogenated micro-crystalline silicon (Âμc-Si:H).

Thin-film silicon solar cells are made very thin, they use less than 5 micrometers of silicon, leading to less material consumption in comparison to bulk micrometer thick c-Si solar cells. So unhydrogenated amorphous silicon should have a lower bandgap than crystalline silicon ( eV).

On the other hand the optical bandgap of unhydrogenated amorphous silicon is reported to vary in. On the Nature of Gap States in Hydrogenated Amorphous Silicon Alloys.

Pages Tanaka, Kazunobu (et al.) Preview Buy Chap95 € A Technique for Calculating the Density of Electronic States of Disordered Materials. Pages Is the DLTS Density of States for Amorphous Silicon Correct.

Pages Amorphous silicon (a-Si) is the non-crystalline form of silicon used for solar cells and thin-film transistors in LCDs. Used as semiconductor material for a-Si solar cells, or thin-film silicon solar cells, it is deposited in thin films onto a variety of flexible substrates, such as glass, metal and plastic.

Amorphous silicon cells generally feature low efficiency, but are one of the most. Part of the Institute for Amorphous Studies Series book series (IASS) Log in to check access. Buy eBook. USD Instant download On the Nature of Gap States in Hydrogenated Amorphous Silicon Alloys.

Subhendu Guha. Pages Is the DLTS Density of States for Amorphous Silicon Correct? J. D. Cohen, D. V. Lang.Our website is made possible by displaying certain online content using javascript. In order to view the full content, please disable your ad blocker or whitelist.

The use of a multijunction thin film solar cell is one of the techniques for improving the conversion efficiency. A high conversion efficiency of % was obtained in triple-junction Si-based thin film solar cells with hydrogenated amorphous silicon (a-Si:H)/hydrogenated silicon germanium (a-SiGe x:H)/hydrogenated microcrystalline silicon (µc-Si:H) solar cells as a top/middle/bottom cells.